Units:

12

Description:

This course covers the design and analysis of radio-frequency integrated systems at the transistor level using state of the art CMOS and bipolar technologies. It focuses on system-level trade-offs in transceiver design, practical RF circuit techniques, and physical understanding for device parasitics. Accurate models for active devices, passive components, and interconnect parasitics are critical for predicting high-frequency analog circuit behavior and will be examined in detail. The course will start with fundamental concepts in wireless system design and their impact on design trade-offs in different transceiver architectures. Following that, RF transistor model, passive matching networks will be discussed. Noise analysis and low-noise amplifier design are studied next. The effects of nonlinearity are treated along with mixer design techniques. Practical bias circuit for RF design will be illustrated. Then, the importance of phase noise and VCO design will be considered together. The course will conclude with a brief study of frequency synthesizer and power amplifier design. Senior or graduate standing required.

Last Modified: 2024-11-21 4:21PM

Semesters offered:

• Spring 2025
• Spring 2024
• Fall 2021
• Fall 2020
• Spring 2020
• Spring 2019
• Fall 2018
• Spring 2018
• Spring 2017
• Spring 2016
• Fall 2014
• Fall 2013
• Spring 2013
• Spring 2012
• Spring 2011
• Spring 2010
• Spring 2009
• Spring 2008
• Spring 2007
• Fall 2006
• Fall 2005
• Spring 2005
• Spring 2004
• Spring 2003
• Spring 2002
• Spring 2001
• Spring 2000
• Spring 1999
• Spring 1998